1γ DRAM technology
Micron 1γ (1-gamma) DRAM technology continues to lead the advancements to memory technology. 1γ technology sees generation-over-generation improvements characterized with advanced design optimization, power efficiencies, and performance scaling that demonstrates Micron’s ongoing dedication to innovation and excellence.
Gen-over-gen technology leadership
1γ (1-gamma) DRAM technology builds on the excellence of 1α (1-alpha) and 1β (1-beta) nodes, improving bit density per wafer by more than 30% over 1β.1 Design enhancements drive increased speed capabilities while simultaneously lowering power requirements. Extreme ultraviolet (EUV) lithography process improvements have pioneered a method that yields finer features on silicon in a shorter amount of time.
Engineering excellence
Micron 1γ DRAM technology unlocks the potential of DDR5 and ramps the potential for speeds up to 9200MT/s – 15% faster than relative 1β products. More Speed = More Power? Not for 1γ. Engineering excellence means 1γ DDR5 is capable of faster speeds while also reducing power – up to 20%.2
Empowering tomorrow's innovation
Micron 1γ drives the next generation of memory innovation that tomorrow’s problems require. As data-centric workloads like AI increase across data centers, mobile devices, automotive applications, and even personal computers, Micron 1γ is poised to empower users with improved power savings, increased capacity and industry-leading performance.
Improvement in memory density per wafer when compared to previous 1β DRAM technology
Reduction in power compared to 1β DDR5
Speed improvements compared to 1β DDR5
Leads with innovations in next-gen memory solutions
Micron is leading gen-over-gen technology transitions with process and design innovations to enable future memory solutions. With 1γ, Micron continues to lead memory technology advancement to meet the industry’s need for higher performance, lower power and increased supply. Learn more from the infographic.
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Pioneering memory technology advancements for future compute needs
Micron today announced it is the first in the industry to sample its 1γ (1-gamma) DRAM node in DDR5 memory to select data center customers, client customers and ecosystem enablers.
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Behind 1γ: A new DRAM process node from Micron
Micron 1γ technology node is a new manufacturing process that uses cutting-edge extreme ultraviolet (EUV) lithography and Micron next-gen high-K metal gate (HKMG) CMOS technology to deliver significant gains across bit density, power efficiency and performance. Read the technical brief to learn more about the advanced technologies behind 1γ that improve DRAM technology and optimize fab production, positioning Micron to efficiently drive next-gen memory innovation for AI across data center, mobile, automotive and client segments.
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Emerging technologies & strategic growth: theCUBE interview with Sumit Sadana
Join us for an insightful interview with Sumit Sadana, EVP and Chief Business Officer at Micron, hosted by Savannah Peterson and Dave Vellante from theCUBE at MWC25 Barcelona. Learn more about Micron's latest 1-gamma DRAM technology and EUV advancements and explore the future of high-bandwidth memory and AI-driven growth.